Speakers : Wang Shenglin, Advanced Process Researcher, R&D Center, CanSemi Semiconductor Co., Ltd.
the speech topic : Temperature Field Optimization in Silicon Epitaxial Film Growth
speech abstract :
The uniformity of temperature field is crucial to the control of defects in the growth process of silicon epitaxial film. Using JMP DOE combined with limited conditions, the temperature field can be efficiently optimized, a temperature control window without Si slip defects is given, and temperature setting parameters are optimized. At the same time, the Prediction profiler is used to give the temperature control window without Si slip at different temperatures, and a common window is selected to shorten the development cycle.
